Sign reversal and manipulation of anomalous Hall resistivity in facing-target sputtered Pt/Mn4N bilayers

The magnetic and electronic transport properties manipulated by spin-orbit torque have been devoted much attention as they show a great promise for future spintronic devices. Here, the spin dependent transport properties of the facing-target sputtered Pt/Mn4N bilayers on MgO (001) substrates have been investigated systematically. The Hall resistivity of Pt/Mn4N bilayers is strongly dependent on temperature, applied current intensity, Mn4N and Pt layer thicknesses. The temperature-dependent sign reversal of anomalous Hall resistivity appears in Pt/Mn4N bilayers, which is dominated by the competition between the magnetic proximity and spin Hall effects. Besides, the magnitude of anomalous Hall resistivity can be manipulated by applied current density. The critical and saturation currents are related to Mn4N and Pt layer thicknesses. Furthermore, a Dzyaloshinskii-Moriya interaction coefficient (D) of 5.63 mJ center dot m(-2) is calculated in Pt/Mn4N/MgO systems. The details of the anomalous Hall effects in Pt/Mn4N bilayers are helpful to understand the interfacial effects between heavy metals and ferrimagnets.

Automated summary

The spin-dependent transport properties of Pt/Mn4N bilayers on MgO (001) substrates have been systematically investigated. The results show that the Hall resistivity of the bilayers is strongly dependent on temperature, applied current intensity, Mn4N and Pt layer thicknesses. The temperature-dependent sign reversal of the anomalous Hall resistivity is dominated by the competition between the magnetic proximity and spin Hall effects. Furthermore, the magnitude of the anomalous Hall resistivity can be manipulated by applied current density.