4.6 Article

Fabrication and Characterization of Semiconductor Photoelectrodes with Orientation-Controlled α-Fe2O3 Thin Films

Journal

JOURNAL OF PHYSICAL CHEMISTRY C
Volume 120, Issue 5, Pages 2747-2752

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acs.jpcc.5b10838

Keywords

-

Funding

  1. Ministry of Education, Culture, Sports, Science and Technology (MEXT) Elements Strategy Initiative to Form Core Research Center
  2. MEXT Photon and Quantum Basic Research Coordinated Development Program
  3. Japan Society for the Promotion of Science Foundation [15H03881]
  4. Iwatani Naoji Foundation
  5. JSPS
  6. Program for the MEXT Leading Graduate Schools Academy for Co-creative Education of Environment and Energy Science (ACEEES)
  7. Grants-in-Aid for Scientific Research [15H03881, 14J11989] Funding Source: KAKEN

Ask authors/readers for more resources

Epitaxial alpha-Fe2O3 thin films on conducting Ta-doped SnO2 bottom layers are prepared by pulsed-laser deposition in order to elucidate variation of the photoelectrochemical (PEC) properties for the water oxidation reaction on the alpha-Fe2O3 photoanodes with different orientation and thickness. Cyclic voltammetry under illumination shows that current density (photocurrent onset potential) of the m-axis oriented samples is considerably larger (lower) than that of the c-axis oriented ones. Using electrochemical impedance spectroscopy under illumination, we ascribe these behaviors to difference in surface states between c-and m-planes besides anisotropic conductivity along the individual axes. Our study demonstrates the power of utilizing well-defined epitaxial thin films to investigate the anisotropic PEC properties of visible-light-driven photo electrodes.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available