Journal
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
Volume 17, Issue 3, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssr.202200413
Keywords
atomic coordination; interfaces; negative charges; positive charges
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This study investigates the influence of atomic coordination structures on the interfacial charges in Al2O3/GaN and Al2O3/Si heterostructures. It is found that the interfacial charge polarity is correlated with the atomic coordination of Al2O3, with octahedral [AlO6](9-) coordination dominant at the Al2O3/GaN interface and tetrahedral [AlO4](5-) coordination dominant at the Al2O3/Si interface.
Al2O3 is used to form Al2O3/GaN and Al2O3/Si heterostructures for many electronic and optoelectronic devices. Yet the origins of the positive interfacial charges in the Al2O3/GaN heterostructure and negative interfacial charges in the Al2O3/Si heterostructure are often elusive. Herein, in-depth studies of the Al2O3/GaN and Al2O3/Si heterostructures are conducted, especially on how the atomic coordination structure affects the interfacial charges. It is discovered that the octahedral [AlO6](9-) coordination surpassed tetrahedral [AlO4](5-) coordination at the Al2O3/GaN interface, whereas tetrahedral [AlO4](5-) coordination dominated at the Al2O3/Si interface. Therefore, the interfacial charge polarity is correlated with the nonstoichiometry atomic coordination of Al2O3 at the two interfaces. This study reveals the atomic origin of charge polarity at high-k/semiconductor interfaces and could facilitate the development of high-performance optoelectronic and electronic devices through engineering the atomic coordination structure of the high-k materials.
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