4.6 Article

Coulomb-blockade oscillation in CdS, ZnS and CdS/ZnS core-shell quantum dots

Journal

PHYSICA SCRIPTA
Volume 98, Issue 2, Pages -

Publisher

IOP Publishing Ltd
DOI: 10.1088/1402-4896/acb40a

Keywords

Core; shell nanostructures; quantum dot; tunnel junction; surface defects; coulomb-blockade oscillation; I-V characteristics

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CdS, ZnS and CdS/ZnS core-shell quantum dots were synthesized and their structural, optical and electrical properties were investigated. Increasing shell thickness introduced higher defect density, defect induced crystal strain and charge separation, leading to quantum tunneling in conduction mechanism of quantum dots. The synthesized semiconductor core/shell quantum dots exhibited oscillatory behavior in their current-voltage characteristics, attributed to coulomb-blockade oscillations. The present study systematically studied room temperature quantum oscillation behavior in core/shell quantum dots and can contribute to the development of future quantum oscillatory nanoscale devices.
CdS, ZnS and core-shell CdS/ZnS quantum dots (QDs) with different ratio concentration of core to shell (1:1, 1:2, 1:3, 1:4, 1:5) were synthesized and their structural, optical and electrical properties were studied with respect to the increase shell thickness. XRD exhibits the wurtzite structure of CdS QDs along with the cubic trace of ZnS. HRTEM images exhibit spherical shaped particle morphology for both CdS and CdS/ZnS core-shell QDs. The optical properties show a defect control mechanism in carrier transport. Enhancing shell thickness introduces higher defect density, defect induced crystal strain and charge separation which leads to quantum mechanical tunneling in determination of conduction mechanism through QDs. The current-voltage (I-V) characteristics of the QD devices shows an oscillatory behavior which may be attributed to coulomb-blockade oscillations because of quantum structure of QDs. Room temperature quantum oscillation behavior has been studied systematically for the synthesized semiconductor core/shell QDs which is the major finding of the present work. Mullen's two tunnel junction model has been used for the QD devices, which is in agreement with the observed coulomb oscillations for R-1 MUCH LESS-THAN R-2 and C-1 MUCH LESS-THAN C-2, originated from defect induced surface and interface of core/shell structure. The present experimental results may contribute towards study and development of futuristic quantum oscillatory nanoscale devices.

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