Experimental demonstration of a 160 Gbit/s 3D-integrated silicon photonics receiver with 1.2-pJ/bit power consumption

Article Engineering, Electrical & Electronic

Analog Front End of 50-Gb/s SiGe BiCMOS Opto-Electrical Receiver in 3-D-Integrated Silicon Photonics Technology

Farhad Bozorgi et al.

Summary: This work presents a 3-D-integrated opto-electrical receiver (RX) analog front end (AFE) operating up to 50 Gb/s. With low-power circuit design to reduce input-referred noise, it achieves high sensitivity and energy efficiency.

IEEE JOURNAL OF SOLID-STATE CIRCUITS (2022)

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Article Engineering, Electrical & Electronic

112 Gb/s PAM-4 Silicon Photonics Receiver Integrated With SiGe-BiCMOS Linear TIA

Daisuke Okamoto et al.

Summary: A silicon photonics receiver integrated with a SiGe-BiCMOS linear transimpedance amplifier using flip-chip bonding technology was developed to address the I/O bottleneck problem in inter-chip data communication. The proposed device achieved a 112 Gb/s PAM-4 operation and maintained a linear response. This study contributes to the advancement of silicon photonics PAM-4 receivers.

IEEE PHOTONICS TECHNOLOGY LETTERS (2022)

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Article Engineering, Electrical & Electronic

Silicon Photonic Based Stacked Die Assembly Toward 4x200-Gbit/s Short-Reach Transmission

Ying Zhao et al.

Summary: We present a silicon photonic based stacked die assembly compatible with the commercial CMOS process, which is designed for a 4x200-Gbit/s parallel single-mode fiber transmission system. PAM-8 is identified as a promising candidate for 200-Gbit/s transmission in single lane. The receiver sensitivity is enhanced without using expensive optical amplifier, achieving net 200-Gbit/s transmission over 10 km.

JOURNAL OF LIGHTWAVE TECHNOLOGY (2022)

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Article Optics

High-performance waveguide Ge/Si avalanche photodiode with a lateral separate-absorption-charge-multiplication structure

Yuluan Xiang et al.

Summary: In this study, a high-performance waveguide Ge/Si avalanche photodiode operating at the O-band (1310 nm) is designed and fabricated. The device shows excellent responsivity, bandwidth, and low dark current, making it suitable for future high-speed data transmission systems.

OPTICS EXPRESS (2022)

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Article Optics

High-speed waveguide Ge/Si avalanche photodiode with a gain-bandwidth product of 615 GHz

Yuluan Xiang et al.

Summary: This paper presents the design and fabrication of a 48-GHz waveguide Ge/Si avalanche photodiode for operation at the O-band. The fabricated APD shows high sensitivity and a record gain-bandwidth product, enabling high-speed data reception with improved performance compared to a reference PIN photodiode.

OPTICA (2022)

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Review Optics

Silicon photonics for high-capacity data communications

Yaocheng Shi et al.

Summary: Silicon photonic technology has made significant progress in recent years as an advanced platform for photonic integrated circuits. Devices such as optical modulators, photodetectors, (de)multiplexers, and heterogeneously integrated lasers have been developed and their performance even surpasses traditional III-V materials and photonic integrated circuit platforms, laying the foundation for large-scale photonic integration.

PHOTONICS RESEARCH (2022)

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Article Engineering, Electrical & Electronic

A 3-D-Integrated Silicon Photonic Microring-Based 112-Gb/s PAM-4 Transmitter With Nonlinear Equalization and Thermal Control

Hao Li et al.

Summary: This article presents a 3-D-integrated 112-Gb/s PAM-4 optical transmitter using microring modulators and CMOS electronics, achieving high energy efficiency and low power consumption. Nonlinear equalization and thermal control method are utilized to address static and dynamic nonlinearities of MRMs. The PAM-4 measurement results demonstrate excellent performance in compensating for temperature sensitivity and achieving efficient energy consumption.

IEEE JOURNAL OF SOLID-STATE CIRCUITS (2021)

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Article Engineering, Electrical & Electronic

A 97-GHz 66-dBΩ SiGe BiCMOS Low-Noise Transimpedance Amplifier for Optical Receivers

Giannino Dziallas et al.

Summary: The letter presents a transimpedance amplifier (TIA) with a bandwidth of 97 GHz, maximum transimpedance gain of 66 dB, and integrated noise current density of 6.3 pA/√Hz, operating at up to 120 Gb/s and consuming 145 mW. The novelty of this work lies in achieving a higher bandwidth while maintaining noise performance comparable to the state of the art, through a combination of low-BW input stage and multi-stage postequalization. The design shows the best performance in terms of overall gain, bandwidth, and noise for the lowest power consumption compared to existing designs.

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS (2021)

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Article Optics

Ultra-fast germanium photodiode with 3-dB bandwidth of 265 GHz

S. Lischke et al.

Summary: By sandwiching a germanium fin between complementary in situ-doped silicon layers, a high-performance waveguide-coupled germanium photodiode is achieved, showing high internal responsivities and low dark currents at a wavelength of 1,550 nm. This novel device concept enables photodetectors with outstanding performance, with internal bandwidth-efficiency products reaching 86 GHz.

NATURE PHOTONICS (2021)

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Article Optics

180 Gbit/s Si3N4-waveguide coupled germanium photodetector with improved quantum efficiency

Xiao Hu et al.

Summary: This study presents a high quantum efficiency and high-speed silicon nitride waveguide coupled germanium-on-silicon photodetector, which demonstrates superior performance in optical communication applications. By optimizing the device structure design, the quantum efficiency of the detector is significantly improved, enabling high-speed data transmission with excellent performance.

OPTICS LETTERS (2021)

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Article Engineering, Electrical & Electronic

High-Speed DD Transmission Using a Silicon Receiver Co-Integrated With a 28-nm CMOS Gain-Tunable Fully-Differential TIA

Yang Hong et al.

Summary: The study presents a direct detection transmission using an integrated silicon optical receiver at over 100 Gb/s, demonstrating its effectiveness in various optical signal modes. By adjusting the TIA voltage supply, the integrated optical receiver can achieve high-speed optical transmission while balancing electrical bandwidth and transimpedance gain.

JOURNAL OF LIGHTWAVE TECHNOLOGY (2021)

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Article Engineering, Electrical & Electronic

56 Gb/s NRZ O-Band Hybrid BiCMOS-Silicon Photonics Receiver Using Ge/si Avalanche Photodiode

Srinivasan Ashwyn Srinivasan et al.

Summary: The study presents hybrid BiCMOS-Silicon photonics receivers with waveguide coupled Ge/Si avalanche photodiodes, demonstrating high optical modulation amplitude sensitivities at 50 Gb/s and 56 Gb/s. An in-depth analysis of receiver sensitivity is conducted to identify pathways for further improvements, paving the way for enhanced optical link margins.

JOURNAL OF LIGHTWAVE TECHNOLOGY (2021)

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Article Optics

High-speed and high-power germanium photodetector with a lateral silicon nitride waveguide

Xiao Hu et al.

Summary: This paper introduces the concept of Ge-on-Si PD with double lateral silicon nitride (Si3N4) waveguides for the first time, which improves operation speed for high input powers. The performance is comprehensively characterized by static and dynamic measurements, demonstrating high power handling and transmission rates of 70-150 Gbit/s in high-speed data transmission.

PHOTONICS RESEARCH (2021)

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Article Computer Science, Information Systems

A 5-50 GHz SiGe BiCMOS Linear Transimpedance Amplifier with 68 dBΩ Differential Gain Towards Highly Integrated Quasi-Coherent Receivers

Guillermo Silva Valdecasa et al.

Summary: This article discusses the design and testing of a linear TIA for high-speed quasi-coherent receivers, which achieved high optical receiver sensitivity at 10 Gbps and 25 Gbps. The proposed technology represents a key component for increasing data rates in highly integrated receiver systems.

ELECTRONICS (2021)

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Article Optics

100 Gbit/s co-designed optical receiver with hybrid integration

Weizhong Li et al.

Summary: This study demonstrates a co-designed optical receiver integrated with a silicon-photonic photodetector and silicon-germanium trans-impedance amplifier. By accurate equivalent circuit models and proposed EQ techniques, the bandwidth of the optical receiver is successfully extended to achieve high-speed data transmission.

OPTICS EXPRESS (2021)

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Article Optics

High-performance germanium avalanche photodetector for 100 Gbit/s photonics receivers

Xiao Hu et al.

Summary: A high-bit rate and low-bias voltage waveguide-integrated vertical germanium avalanche photodetector with doping optimization has been reported, which alleviates the need for complex epitaxial single-crystal silicon layer and multiple ion implantation schemes. The optical absorption and carrier avalanche multiplication gain occur in the same germanium layer, leading to a maximum gain of 112.4 at an input power of -30.2 dBm. This technology enables reliable and robust on-chip photodetection for future energy efficient silicon photonic interconnects.

OPTICS LETTERS (2021)

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Article Physics, Condensed Matter