Journal
OPTICAL MATERIALS
Volume 134, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.optmat.2022.113114
Keywords
Third-order nonlinear susceptibility?(3); Third-order harmonic generation; ZnSe thin Film; Optical bandgap; Nanocrystalline structure
Categories
Funding
- National Key R&D Program of China
- National Natural Science Founda-tion of China
- CAS Special Research Assistant Project, China Postdoctoral Science Foundation
- Key Foreign Cooperation Projects of Bureau of INTERNATIONAL COOPERATION of Chinese Academy of Sciences
- [2018YFE0115900]
- [11874369]
- [52002271]
- [2021M703326]
- [181231KYSB20210001]
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This study reports the nonlinear optical susceptibility characteristics of nanocrystalline ZnSe thin films with different thicknesses. The results show that the third-order nonlinear susceptibility of ZnSe films is dependent on the pump wavelength and film thickness, with thicker films exhibiting higher nonlinear optical properties.
The present work reports the nonlinear optical susceptibility of nanocrystalline ZnSe thin films with different thicknesses, measured using third-order harmonic technology at irradiation wavelengths lambda of 1200-1900 nm. The results show that the third-order nonlinear susceptibility chi(3) of ZnSe thin films is a function of the pump wavelength and film thickness. The chi(3) values for the thinner 202-nm film generally decreased with the redshift of the wavelength and were approximately 10-20 m2/V2 at lambda <= 1500 nm and 10-21 m2/V2 at lambda > 1500 nm. The chi(3) values for the thicker 1021-nm film did not follow a decreasing trend, but instead exhibited local peaks at 1350, 1500 and 1750 nm, with a maximum value of approximately 2.4 x 10-19 m2/V2 at lambda = 1750 nm. Within 1200-1900 nm, the chi(3) of the thicker film was always greater than that of the thinner film. In addition, a weak second-order harmonic at wavelengths within 1100-1300 nm was observed for the 1021 nm ZnSe thin film. The large difference in the nonlinear optical properties between the thinner and thicker film samples is conjectured to be caused by the increased density of geometric defects and the gradual formation of local anisotropy with increasing film thickness. Nonlinear optical coefficient measurements of ZnSe thin films with different thick-nesses over a broad spectrum are important for the application of these films in nonlinear thin-film optoelec-tronic devices.
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