Design and analysis of novel high-performance III-nitride MQW-based nanowire white-LED using HfO2/SiO2 encapsulation

A novel, white light-emitting diode structure with improved thermal characteristics is designed for providing efficient light which may be used especially in the underground mining environment. It describes a new nano hafnium oxide-silica doped silicone layer as LED encapsulation material that promises enhanced efficiency by 30.1% and reduced efficiency droop of 0.491%. The enhanced power and efficiency of the LED with HfO2/SiO2 doped bi-layer are attributed to the significant minimization of overflow of electrons which is fundamentally responsible for efficiency degradation through p-GaN region. In this article encapsulant material based on nano HfO2/SiO2 not only enhances light extraction but opens a broad new range of encapsulant engineering capabilities composites. Our designed LED is generated from a monolithic composition of blue and yellow spectrum which eventually creates the white light. This minimizes the problems related to multiple numbers of LEDs, green gap and phosphor color rendering.

Automated summary

A novel white light-emitting diode structure with enhanced thermal characteristics is designed for efficient lighting in underground mining. The use of a new nano hafnium oxide-silica doped silicone layer as LED encapsulation material improves efficiency by 30.1% and reduces efficiency droop by 0.491%. The improved power and efficiency are attributed to the reduction of electron overflow in the p-GaN region, achieved by the HfO2/SiO2 doped bi-layer. The use of nano HfO2/SiO2 as encapsulant material not only enhances light extraction, but also expands the possibilities of encapsulant engineering composites.