Observation of Kondo condensation in a degenerately doped silicon metal

Heavily doping silicon with phosphorus produces a dense population of metallic conduction electrons and localized magnetic moments. Low-temperature measurements show evidence of strongly correlated state. When a magnetic moment is embedded in a metal, it captures nearby itinerant electrons to form a so-called Kondo cloud. When magnetic impurities are sufficiently dense that their individual clouds overlap with each other they are expected to form a correlated electronic ground state. This is known as Kondo condensation and can be considered a magnetic version of Bardeen-Cooper-Schrieffer pair formation. Here, we examine this phenomenon by performing electrical transport and high-precision tunnelling density-of-states spectroscopy measurements in a highly P-doped crystalline silicon metal in which disorder-induced localized magnetic moments exist. We detect the Kondo effect in the resistivity of the Si metal at temperatures below 2 K and an unusual pseudogap in the density of states with gap edge peaks below 100 mK. The pseudogap and peaks are tuned by applying an external magnetic field and transformed into a metallic Altshuler-Aronov gap associated with a paramagnetic disordered Fermi liquid phase. We interpret these observations as evidence of Kondo condensation followed by a transition to a disordered Fermi liquid.

Automated summary

Doping silicon with phosphorus and introducing localized magnetic moments results in a correlated electronic ground state known as Kondo condensation. By conducting electrical transport and density-of-states spectroscopy measurements, we detect the Kondo effect and observe an unusual pseudogap in the resistivity and density of states of the highly P-doped silicon metal. These observations provide evidence of Kondo condensation followed by a transition to a disordered Fermi liquid phase.