4.6 Article

Novel ternary organic resistive switching memory doped with bipolar materials

Journal

NANOTECHNOLOGY
Volume 34, Issue 11, Pages -

Publisher

IOP Publishing Ltd
DOI: 10.1088/1361-6528/acac34

Keywords

organic resistive switching memory; ternary device; bipolar material

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Organic resistive switching memory (ORSM) has great potential for neotype memory devices due to its simple architecture, low power consumption, high switching speed, and feasibility of large-area fabrication. This study achieved high ON/OFF ratios and outstanding device stability by doping bipolar materials into solution-processed ternary ORSM devices. The resistive switching performance was effectively improved by doping two bipolar materials in different blending concentrations, resulting in increased ON/OFF ratios and decreased operating voltages. The use of bipolar materials enhances the operation of ORSMs through energy level alignment and charge transfer.
Organic resistive switching memory (ORSM) shows great potential for neotype memory devices due to the preponderances of simple architecture, low power consumption, high switching speed and feasibility of large-area fabrication. Herein, solution-processed ternary ORSM devices doped with bipolar materials were achieved with high ON/OFF ratio and outstanding device stability. The resistive switching performance was effectively ameliorated by doping two bipolar materials (DpAn-InAc and DpAn-5BzAc) in different blending concentration into the PVK:OXD-7 donor-accepter system. Compared with the binary system (PVK: 30 wt% OXD-7), the ON/OFF ratios of the ternary devices doped with 6 wt% DpAn-5BzAc were greatly increased from 7.91 x 10(2) to 4.98 x 10(4), with the operating voltage ( divide V (set)-V (reset) divide ) declined from 4.90 V to 2.25 V, respectively. Additionally, the stability of resistance state and uniformity of operating voltage were also significantly optimized for the ternary devices. For comparison, ternary devices doped with DpAn-InAc have been explored, which also achieved improved resistive switching behavior. A detailed analysis of electrical characteristics and the internal charge transfer properties of ORSM was performed to unveil the performance enhancement in ternary devices. Results indicate that the use of bipolar materials favors the efficient operation of OSRMs with proper energy level alignment and effective charge transfer.

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