Interfacial thermal conductance between atomically thin boron nitride and graphene

Atomically thin hexagonal boron nitride (BN) is a promising dielectric substrate for graphene and other two-dimensional (2D) materials for performance enhancement and heat dissipation. However, the interfacial heat conductance between atomically thin BN and graphene has not been experimentally studied yet. Here, we report that the interfacial thermal conductance between high-quality graphene and trilayer BN is 9.64 +/- 2.12 MW m(-2) K-1 in the temperature range of 293-393 K, indicating that the interfacial thermal conductance is depressed when the heterostructure thickness is smaller than the wavelength of the low-frequency phonons, e.g. ZA in BN.

Automated summary

The interfacial thermal conductance between high-quality graphene and trilayer BN is depressed when the heterostructure thickness is smaller than the wavelength of the low-frequency phonons, such as ZA in BN.