Room-temperature spin-valve devices based on Fe3GaTe2/MoS2/Fe3GaTe2 2D van der Waals heterojunctions

Article Chemistry, Multidisciplinary

Fe3GaTe2/MoSe2 ferromagnet/semiconductor 2D van der Waals heterojunction for room-temperature spin-valve devices

Hongfei Yin et al.

Summary: A spin-valve heterojunction based on two-dimensional van der Waals heterostructures, such as Fe3GaTe2/MoSe2/Fe3GaTe2, can achieve spin-valve effect at room temperature, offering advantages of low power consumption and miniaturization.

CRYSTENGCOMM (2023)

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Review Chemistry, Multidisciplinary

Two-dimensional magnetic atomic crystals

Shanfei Zhang et al.

Summary: This paper reviews the preparation methods, physical properties, device applications, and future development directions of 2D magnetic atomic crystals. Research shows that these crystals have various magnetic properties and potential applications in heterojunctions, reluctance, etc.

MATERIALS HORIZONS (2022)

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Article Multidisciplinary Sciences

High-performance polarization-sensitive photodetectors on two-dimensional β-InSe

Zhinan Guo et al.

Summary: In this work, stable p-type 2D-layered beta-InSe was prepared via temperature gradient method, and its strong anisotropic transport and high photoresponse properties were experimentally and theoretically proven. Consequently, beta-InSe is identified as a competitive candidate for filter-free polarization-sensitive photodetectors.

NATIONAL SCIENCE REVIEW (2022)

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Article Chemistry, Multidisciplinary

Tuning the Exchange Bias Effect in 2D van der Waals Ferro-/Antiferromagnetic Fe3GeTe2/CrOCl Heterostructures

Tianle Zhang et al.

Summary: In this study, the exchange bias effect in Fe3GeTe2 (FGT)/CrOCl heterostructures is investigated through anomalous Hall effect (AHE) and reflective magnetic circular dichroism (RMCD) measurements. The exchange bias field (H-EB) is successfully tuned by changing the FGT/CrOCl thickness and the cooling field. A larger H-EB in RMCD measurements is observed, which is proposed to be related to the distribution of uncompensated spins at the interface.

ADVANCED SCIENCE (2022)

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Article Multidisciplinary Sciences

Above-room-temperature strong intrinsic ferromagnetism in 2D van der Waals Fe3GaTe2 with large perpendicular magnetic anisotropy

Gaojie Zhang et al.

Summary: We report a two-dimensional intrinsic ferromagnetic crystal Fe3GaTe2 with strong ferromagnetism above room temperature and large perpendicular magnetic anisotropy. This crystal exhibits record-high Curie temperature, high saturation magnetic moment, large PMA energy density, and large anomalous Hall angle at room temperature. Room-temperature anomalous Hall devices and direct magnetic domains imaging based on Fe3GaTe2 nanosheet have been realized.

NATURE COMMUNICATIONS (2022)

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Article Nanoscience & Nanotechnology

Spin filtering effect in all-van der Waals heterostructures with WSe2 barriers

Yuanhui Zheng et al.

Summary: Utilizing van der Waals heterostructures with WSe2 barriers has demonstrated the spin-filtering effect, allowing for manipulation of magnetoresistance through changing the thickness of WSe2. A spin-filtering model based on Delta-symmetry electrons tunneling explains the transition from negative to positive MR signal. These findings highlight the potential of TMDC materials in controlling spin currents in 2D spintronic devices.

NPJ 2D MATERIALS AND APPLICATIONS (2022)

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Article Physics, Multidisciplinary

Large Room-Temperature Magnetoresistance in van der Waals Ferromagnet/Semiconductor Junctions

Wenkai Zhu et al.

Summary: A large tunnel magnetoresistance (TMR) has been achieved at room temperature in magnetic tunnel junctions (MTJs) based on two-dimensional van der Waals (vdW) heterostructures, which opens up new possibilities for low power consumption and miniaturization of spintronic devices.

CHINESE PHYSICS LETTERS (2022)

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Article Chemistry, Multidisciplinary

Large Tunneling Magnetoresistance in van der Waals Ferromagnet/Semiconductor Heterojunctions

Wenkai Zhu et al.

Summary: This study reports all-2D van der Waals vertical spin-valve devices with two distinct transport behaviors and reveals the critical role of pinholes in the magnetoresistance of such devices.

ADVANCED MATERIALS (2021)

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Article Chemistry, Multidisciplinary

Applications of Few-Layer Nb2C MXene: Narrow-Band Photodetectors and Femtosecond Mode-Locked Fiber Lasers

Lingfeng Gao et al.

Summary: The physicochemical properties of niobium carbide have been widely explored, showing potential applications in photoelectronics. Few-layer Nb2C MXene can be used as a building block for photoelectrochemical-type photodetectors and mode-lockers, with adjustable photoresponse performance. Additionally, Nb2C nanosheets demonstrate stability in ultrastable pulses for optical switches and high harmonic orders in fiber lasers. These results expand the application prospects of two-dimensional MXenes in various photoelectronic devices.

ACS NANO (2021)

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Article Physics, Applied

Rotated read head design for high-density heat-assisted shingled magnetic recording

Wei-Heng Hsu et al.

Summary: In heat-assisted shingled magnetic recording, rotating the read head to match the curvature of asymmetrically curved transitions can significantly improve user density. With optimized rotation angle, the user areal density reaches 6.2 Tb/in(2), exceeding previous projections by more than 30%.

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Spin-Valve Effect in Fe3GeTe2/MoS2/Fe3GeTe2 van der Waals Heterostructures

Hailong Lin et al.

ACS APPLIED MATERIALS & INTERFACES (2020)

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MRS BULLETIN (2018)

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Tunneling Spin Valves Based on Fe3GeTe2/hBN/Fe3GeTe2 van der Waals Heterostructures

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NANO LETTERS (2018)

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Hard magnetic properties in nanoflake van der Waals Fe3GeTe2

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NATURE COMMUNICATIONS (2018)

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Gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2

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NATURE (2018)

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Magnetic transport property of NiFe/WSe2/NiFe spin valve structure

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JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS (2017)

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Discovery of intrinsic ferromagnetism in two-dimensional van der Waals crystals

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Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit

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Room-temperature spin-valve devices based on Fe3GaTe2/MoS2/Fe3GaTe2 2D van der Waals heterojunctions

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