New Approach to Low-Power-Consumption, High-Performance Photodetectors Enabled by Nanowire Source-Gated Transistors

Power consumption makes next-generation large-scale photodetection challenging. In this work, the source-gated transistor (SGT) is adopted first as a photodetector, demonstrating the expected low power consumption and high photodetection performance. The SGT is constructed by the functional sulfur-rich shelled GeS nanowire (NW) and low-function metal, displaying a low saturated voltage of 0.61 V +/- 0.29 V and an extremely low power consumption of 7.06 pW. When the as-constructed NW SGT is used as a photodetector, the maximum value of the power consumption is as low as 11.96 nW, which is far below that of the reported phototransistors working in the saturated region. Furthermore, benefiting from the adopted SGT device, the photodetector shows a high photovoltage of 6.6 x 10(-1) V, a responsivity of 7.86 x 10(12) V W-1, and a detectivity of 5.87 x 10(13) Jones. Obviously, the low power consumption and excellent responsivity and detectivity enabled by NW SGT promise a new approach to next-generation, high-performance photodetection technology.

Automated summary

In this work, the source-gated transistor (SGT) is adopted as a low power consumption and high-performance photodetector, showing low saturated voltage and extremely low power consumption. The photodetector based on SGT demonstrates high photovoltage, responsivity, and detectivity. This offers a new approach to next-generation, high-performance photodetection technology.