Journal
NANO LETTERS
Volume 23, Issue 3, Pages 962-968Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.2c04375
Keywords
nanowire quantum dot; photonic waveguide; selective-area vapor-liquid-solid epitaxy; telecom single photon source
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In this study, high purity single photon emission at 1.31μm was achieved using deterministically positioned InP photonic waveguide nanowires. The single photon collection efficiency at first lens was found to be 27.6%, and the probability of multiphoton emission was 0.021. The performance of the source was also evaluated at different temperatures, showing an increase in multiphoton emission probability with temperature.
A key resource in quantum-secured communication protocols are single photon emitters. For long-haul optical networks, it is imperative to use photons at wavelengths compatible with telecom single mode fibers. We demonstrate high purity single photon emission at 1.31 mu m using deterministically positioned InP photonic waveguide nanowires containing single InAsP quantum dot-in-a-rod structures. At excitation rates that saturate the emission, we obtain a single photon collection efficiency at first lens of 27.6% and a probability of multiphoton emission of g(2)(0) = 0.021. We have also evaluated the performance of the source as a function of temperature. Multiphoton emission probability increases with temperature with values of 0.11, 0.34, and 0.57 at 77, 220 and 300 K, respectively, which is attributed to an overlap of temperature-broadened excitonic emission lines. These results are a promising step toward scalably fabricating telecom single photon emitters that operate under relaxed cooling requirements.
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