Journal
NANO LETTERS
Volume 23, Issue 3, Pages 985-992Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.2c04459
Keywords
perovskites; electroluminescence; light-emitting diodes; large area; defects; scalable fabrication
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Researchers have achieved a record-high external quantum efficiency of 12.1% in a large-area perovskite light-emitting diode (PeLED) by using a molecular interface modifier between the perovskite layer and the underlying hole transport layer. The modifier improves the surface wettability, enhances the scalability of solution-processed perovskite films, and enhances the luminous performance of the perovskite emitters.
Despite the rapid progress in perovskite light-emitting diodes (PeLEDs), the electroluminescence performance of large-area perovskite devices lags far behind that of laboratory-size ones. Here, we report a 3.5 cm x 3.5 cm large-area PeLED with a record-high external quantum efficiency of 12.1% by creating an amphipathic molecular interface modifier of betaine citrate (BC) between the perovskite layer and the underlying hole transport layer (HTL). It is found that the surface wettability for various HTLs can be efficiently improved as a result of the coexistence of methyl and carboxyl groups in the BC molecules that makes favorable groups to selectively contact with the HTL surface and increases the surface free energy, which greatly facilitates the scalable process of solution-processed perovskite films. Moreover, the luminous performance of perovskite emitters is simultaneously enhanced through the coordination between C=O in the carboxyl groups and Pb dangling bonds.
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