Enhanced thermoelectric performance of p-type PbTe thin films deposited by magnetron sputtering via incorporating SnS

Incorporating second phase or solid solution into the thermoelectric (TE) material matrix has been proven effective to promote its performance. Recent investigations manifest that the synergistical optimization of the electrical and phonon transport properties could be achieved in the PbTe-SnSe system. Being an analogue of SnSe and more environmental, here, SnS was introduced into p-type PbTe film through intermittent magnetron co-sputtering technique. Small amount SnS was observed to induce the shift of predominant orientation from the (200) plane to the (222) plane as well as distinct change in the surface morphology. After the quite possible SnS solid solution and appropriate subsequent annealing, the electrical conductivity and the power factor (PF) have been optimized prominently. In comparison with that of the pristine PbTe film, the maximum PF has been increased by 217% in the annealed film with the intermediate SnS content.

Automated summary

Introducing SnS into p-type PbTe film through intermittent magnetron co-sputtering technique was found to induce a shift in the predominant orientation as well as distinct changes in the surface morphology. After appropriate annealing, both the electrical conductivity and power factor (PF) were significantly improved, with a maximum PF increase of 217% compared to the pristine PbTe film.