Related references
Note: Only part of the references are listed.Low -energy proton -induced single event effect in NAND flash memories
Cong Peng et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT (2020)
Mechanisms of atmospheric neutron-induced single event upsets in nanometric SOI and bulk SRAM devices based on experiment-verified simulation tool
Zhi-Feng Lei et al.
CHINESE PHYSICS B (2018)
Low energy proton induced single event upset in 65 nm DDR and QDR commercial SRAMs
B. Ye et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2017)
Recent developments in GEANT4
J. Allison et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT (2016)
Influence of User-Controlled Parameters in Alpha Particle-Induced Single-Event Error Rates in Commercial SRAM Cells
Indranil Chatterjee et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2012)
Ion-matter interaction: the three-dimensional version of the thermal spike model. Application to nanoparticle irradiation with swift heavy ions
Ch Dufour et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2012)
SEU Prediction From SET Modeling Using Multi-Node Collection in Bulk Transistors and SRAMs Down to the 65 nm Technology Node
Laurent Artola et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2011)
Effects of atmospheric neutrons and natural contamination on advanced microelectronic memories
F. Wrobel et al.
APPLIED PHYSICS LETTERS (2008)
Alpha particle mitigation strategies to reduce chip soft error upsets
C. Cabral et al.
JOURNAL OF APPLIED PHYSICS (2007)
Impacts of front-end and middle-end process modifications on terrestrial soft error rate
P Roche et al.
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY (2005)
GEANT4-a simulation toolkit
S Agostinelli et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT (2003)
Circuit responses to radiation-induced upsets
K Bernstein
MRS BULLETIN (2003)
Impact of single-event upsets in deep-submicron silicon technology
R Baumann
MRS BULLETIN (2003)
A digital CMOS design technique for SEU hardening
MP Baze et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2000)
Share Paper
