Journal
MICROELECTRONICS JOURNAL
Volume 130, Issue -, Pages -Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.mejo.2022.105616
Keywords
Split gate trench MOSFET; Inverted L-shaped source region; Self-aligned; Gate charge; Specific on-resistance; Breakdown voltage
Funding
- National Natural Science Foundation of China
- Guangdong Basic and Applied Basic Research Foundation
- [62174024]
- [2021B1515020031]
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The proposed inverted L-shaped source region (ILS) structure significantly reduces gate to source capacitance and achieves relatively low gate charge, while maintaining specific on-resistance almost unchanged, resulting in a significant reduction in figure of merit.
In this work, an inverted L-shaped source region (ILS) structure is proposed and studied to improve switching performance of split-gate trench metal-oxide-semiconductor field effect transistor (SGTMOS). The ILS structure is formed by a control gate over etch step followed by a self-aligned implantation afterwards. The ILS structure eliminates the coupled area between the control gate electrode and the highly doped n-type implanted source region. As a result, the gate to source capacitance (Cgs) is significantly reduced and a relatively low gate charge (Qg) can be achieved. At the meantime, specific on-resistance (Ron,sp) almost remains, resulting in a considerable figure of merit (FOM, Ron,sp x Qg) reduction. Simulations and experiments were made to verify the theory. The proposed SGT with the ILS structure achieves an excellent switching FOM, which is smaller than conventional SGT, but almost without impacting other fundamental parameters.
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