4.6 Article

Cu2SnSe3 phase formation from different metallic and binary chalcogenides stacks using magnetron sputtering

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ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2022.107195

Keywords

Cu 2 SnSe 3; Thin films; Absorber layers

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Cu2SnSe3 (CTSe) is a versatile material that can be used as an absorber layer in thin film solar cells or as a starting layer for the synthesis of CZTSe or CZTSSe compounds. However, obtaining CTSe single phase films with optimized properties for solar cells is challenging. In this study, different stack configurations were prepared and analyzed, and it was found that the SnSe2\Cu and Sn\Cu2Se stacks showed the best performance in terms of single phase formation, surface morphology, stoichiometric composition, and band gap.
Cu2SnSe3 (CTSe) is a polyvalent material that can be used as an absorber layer for thin film solar cells or as a starting layer for the synthesis of CZTSe or CZTSSe compounds. Obtaining CTSe single phase films with opti-mized properties for thin film solar cells is a difficult task. A systematic study using both metallic and binary chalcogenides precursors for the formation of the CTSe phase was not performed. The films consisting of four different stacks (Sn\Cu, SnSe2\Cu, Sn\Cu2Se, and SnSe2\Cu2Se) were prepared by magnetron sputtering on soda lime glass (SLG) and molybdenum (Mo) coated SLG substrates, followed by annealing at 550 degrees C under Sn + Se atmosphere. X-ray diffraction and Raman spectroscopy results indicated the formation of a single CTSe phase in most of the stacks deposited on both substrates. Scanning electron microscopy images showed compact surfaces with large grains in the films deposited on Mo substrate, while the films on SLG have more voids on their sur-faces. The elemental analysis measured by energy dispersive spectroscopy revealed stoichiometric films on Mo, and copper and tin rich compositions on SLG substrates. The band gap values inferred by conventional spec-troscopy are between 0.81 and 1.95 eV. It was found that the SnSe2\Cu and Sn\Cu2Se stacks are preferred for the formation of a single CTSe phase, with dense surface morphology, a stoichiometric composition, and an optimal absorber layer band gap. This study opens the way to comprehend the formation reactions during the seleni-zation of metallic and binary chalcogenides precursors towards the optimization of kesterite absorber for photovoltaic device fabrication.

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