Investigation of sputtering pressure on physical properties of CuO films and the electrical properties-temperature relationship of CuO films and p-CuO/n-GaN heterojunction

CuO had huge application prospects in the fields of semiconductor optoelectronic devices. However, the preparation of high-quality CuO films was still an urgent problem to be solved. Herein, we prepared CuO films at different sputtering pressures (0.6-2.1 Pa) by magnetron sputtering technology. The experiment results showed that the sputtering pressure had an obvious effect on the optical properties, structure, morphology and electrical properties of CuO films. It showed that relatively better CuO films could be prepared at 1.6 Pa. Moreover, Hall effect indicated that the change of ambient temperature had an obvious effect on the resistivity and carrier concentration of CuO films. Correspondingly, the p-CuO/n-GaN heterojunction device was fabricated, and the relationship between carrier transport characteristics and ambient temperature was studied. Ambient temperature had obvious influence on the turn-on voltage and rectification ratio of the device. This work provided a basis for the practical application of CuO-based optoelectronic devices.

Automated summary

This study prepared CuO films at different sputtering pressures using magnetron sputtering technology and investigated their optical properties, structural characteristics, electrical properties, and carrier transport characteristics. The results showed that relatively better CuO films could be obtained at 1.6 Pa, and the ambient temperature had a significant influence on the resistivity and carrier concentration of CuO films.