The cationic interstitials induced resistive switching: a case study on Mn-doped SnO2

This work has explored the possible defects in Mn-doped SnO2 and compared the effects of interstitial Mn and oxygen vacancies on the electronic structure of SnO2. Combining the DFT calculations and experimental measurements, we found that when the Mn-doped SnO2 is synthesised under Sn-rich or O-poor conditions, the defect pair of Mn substitution and interstitial rather than oxygen vacancy will be formed, which induces energy band across the Fermi level and significantly affects the electronic structure of SnO2. With the Mn interstitials, stable intrinsic multi-level resistive states and optical SET can be achieved in the Mn-doped SnO2 memristors. This result can provide guidance in the fabrications of defective metal oxides and promote the investigations on cationic interstitial triggered multi-level resistive switching and optoelectronic memristors.

Automated summary

This work explores the defects in Mn-doped SnO2 and compares the effects of interstitial Mn and oxygen vacancies on its electronic structure. The study shows that when Mn-doped SnO2 is synthesized under Sn-rich or O-poor conditions, a defect pair of Mn substitution and interstitial is formed, leading to an energy band across the Fermi level and significant changes in the electronic structure of SnO2. The presence of Mn interstitials allows for stable multi-level resistive states and optical SET in Mn-doped SnO2 memristors, providing guidance for the fabrication of defective metal oxides and promoting research on interstitial-triggered resistive switching and optoelectronic memristors.