Enhanced photovoltaic properties of eosin-Y sensitized solar cells using nanocrystalline N-doped TiO2 photoanode films

Herein, the photovoltaic properties of Eosin-Y dye-sensitized N-doped TiO2 photoanodes are demonstrated. The Doctor Blade method derived N-doped TiO2 photoanodes were obtained from powders prepared by using hy-drolysis at different Ti:N ratios followed by annealing at 400 degrees C/4h. The detailed SEM, TEM, XRD, Raman, and XPS analyses were performed. The N dopant-tempted lattice disorder effects and midgap electronic states arising from O vacancies due to replacement of O by N leads to the narrowing energy band gap, Eg. XPS B.E. confirmed material purity and N-incorporation in TiO2 matrix through O-Ti-N linkages leading to dopant-induced strain. The photovoltaic properties: VOC = 653 mV, JSC = 11 mA/cm2, FF = 51.28 %, eta = 1.73 % obtained for pho-toanode made with 1:15 M ratio can be linked with formation of macrochannel structure leading to substantial porosity for optimum visible light absorption and dye absorption due to N doping in O-Ti-O lattice.

Automated summary

This study demonstrates the photovoltaic properties of Eosin-Y dye-sensitized N-doped TiO2 photoanodes. N-doped TiO2 photoanodes were prepared using the sol-gel method followed by specific treatment. These photoanodes were then analyzed using various techniques. The results show that N doping leads to lattice disorder effects and the formation of midgap electronic states, resulting in a narrowing of the energy band gap. The presence of a large porous structure, which provides optimal visible light absorption and dye absorption, is considered crucial for achieving good photovoltaic performance.