Excitation of intracenter terahertz radiation by plasma oscillations in electron-hole liquid

A new mechanism for the excitation of impurity related terahertz radiation in semiconductors under the conditions of exciton condensation into an electron-hole liquid is reported. The interaction of impurity centers with plasmons localized on droplets of an electron-hole liquid produces ionization of the centers. The subsequent capture of nonequilibrium charge carriers by ionized impurities is followed by terahertz intracenter radiative transitions. In these processes, impurity centers play the role of antennas that convert the near electromagnetic field of plasmons on droplets of an electron-hole liquid into detected radiation. The main experiments were carried out on lithium-doped silicon crystals at helium temperatures under conditions of interband photoexcitation. A theoretical model of the excitation of impurity centers by localized plasmons is developed, which explains the main regularities observed in the experiment.

Automated summary

A new mechanism for the excitation of impurity related terahertz radiation in semiconductors under the conditions of exciton condensation into an electron-hole liquid is reported. Impurity centers interact with plasmons localized on droplets of an electron-hole liquid, leading to ionization of the centers and subsequent terahertz radiative transitions. The impurity centers act as antennas converting the electromagnetic field into radiation, with experiments conducted on lithium-doped silicon crystals at helium temperatures.