Design construction and performance of nanostructured p-Cu2S/n-CdS junction diode

Here we report the deposition of Cu2S/CdS thin-film on FTO substrate through spray-pyrolysis technique. The sizes of the thin-film are estimated through field-emission scanning electron microscopy(FESEM) images, exhibited that the films are mono-dispersed, and nearly spherical with the average size lies in the range of 50 nm to 100 nm, which increases with increasing the temperature. The effect of temperature on the performance of Sn/ Cu2S/CdS/FTO/glass hetrojunction diodes are analyzed through I-V measurement. The diode parameters such as potential height, leakage current, ideality factor and series-shunt resistance are calculated through conventional thermionic-emission, Cheung and Norde models. It is observed that the ideality factor decreases from 1.31 to 1.12 and potential height increases from 0.79 to 0.86, as temperature increases from thermionic emission model. The diode parameter values estimated from these three different methods are in good agreement.

Automated summary

In this study, Cu2S/CdS thin-film was deposited on an FTO substrate using the spray-pyrolysis technique. Field-emission scanning electron microscopy (FESEM) images showed that the thin-films were mono-dispersed and nearly spherical, with an average size ranging from 50 nm to 100 nm, which increased with increasing temperature. The performance of Sn/Cu2S/CdS/FTO/glass hetrojunction diodes was analyzed through I-V measurement, and parameters such as potential height, leakage current, ideality factor, and series-shunt resistance were calculated using different models. It was observed that the ideality factor decreased from 1.31 to 1.12 and the potential height increased from 0.79 to 0.86 with increasing temperature, according to the thermionic emission model. The estimated values of the diode parameters from these three different methods were in good agreement.