4.6 Article

Copper oxide coatings deposited by reactive radio-frequency sputtering for solar absorber applications

Journal

MATERIALS CHEMISTRY AND PHYSICS
Volume 296, Issue -, Pages -

Publisher

ELSEVIER SCIENCE SA
DOI: 10.1016/j.matchemphys.2022.127196

Keywords

Solar selective absorbers; Copper oxide thin films; Reactive radio-frequency sputtering; Morpho-structural properties; Optical and electrical properties; Thermal emissivity

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In this study, submicron copper oxide coatings were deposited on glass and copper substrates using reactive radio-frequency sputtering. The properties of the coatings were examined using various characterization techniques. The films consisted of cupric oxide (Cu2O) at 10% oxygen, transforming into monoclinic CuO for higher oxygen flow rates. The morphology of the films was interpreted as a fish-scale-like growth mode, showing aligned grain strips and coalescing clusters. The films exhibited p-type semiconductor behavior with direct and indirect bandgaps for Cu2O and CuO, respectively. The crystallite size was observed to have a maximum at 30% oxygen flow rate, resulting in column-shaped structures with enhanced surface roughness and specific optical and thermal properties.
Submicron copper oxide coatings were deposited on glass and copper substrates using reactive radio-frequency sputtering of a copper target in argon-oxygen atmospheres. Morphological, structural, and optical properties of the deposited films were examined using X-ray reflectometry and diffraction, optical transmission measurements, Fourier transform infrared spectroscopy, transmission electron microscopy, atomic force microscopy, electrical resistivity, and thermal emissivity measurements. The obtained coatings consist of a major phase of cupric oxide (Cu2O) at 10% oxygen, which transforms into monoclinic CuO through an intermediary tetragonal Cu4O3 phase for greater oxygen flow rates. The morphology of the Cu2O films is interpreted by an original fish-scale-like growth mode based on the nucleation of single crystallites at cluster boundaries of the underlying layer, which promotes the formation of aligned grain strips and yields coalescing clusters of a height similar to the crystallite size. The deposited films behave as p-type semiconductors with a direct bandgap of 1.9 eV and an indirect bandgap of 1.15 eV for Cu2O and CuO, respectively. The oxygen flow rate-dependent crystallite size exhibits a maximum at 30% oxygen for which the CuO film grows in column-shaped structures of continuous sub-100-nm-wide rods with enhanced surface roughness, solar absorptivities of 0.93 and 0.83, and thermal emissivities of 0.07 and 0.17 in the temperature ranges 50-150 degrees C and 150-250 degrees C, respectively.

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