Metalorganic chemical vapor deposition of (100) β-Ga2O3 on on-axis Ga2O3 substrates

Metalorganic chemical vapor deposition (MOCVD) growths of beta-Ga2O3 on on-axis (100) Ga2O3 substrates are comprehensively investigated. Key MOCVD growth parameters including growth temperature, pressure, group VI/III molar flow rate ratio, and carrier gas flow rate are mapped. The dependence of the growth conditions is correlated with surface morphology, growth rate, and electron transport properties of the MOCVD grown (100) beta-Ga2O3 thin films. Lower shroud gas (argon) flow is found to enhance the surface smoothness with higher room temperature (RT) electron Hall mobility. The growth rate of the films decreases but with an increase of electron mobility as the VI/III molar flow rate ratio increases. Although no significant variation on the surface morphologies is observed at different growth temperatures, the general trend of electron Hall mobilities are found to increase with increasing growth temperature. The growth rates reduce significantly with uniform surface morphologies as the chamber pressure increases. By tuning the silane flow rate, the controllable carrier concentration of (100) beta-Ga2O3 thin films between low-10(17) cm(-3) and low-10(18 )cm(-3) was achieved. Under optimized growth condition, an (100) beta-Ga2O3 thin film with RMS roughness value of 1.64 nm and a RT mobility of 24 cm(2)/Vs at a carrier concentration of 7.0 x 10(17) cm(-3) are demonstrated. The mobilities are primarily limited by the twin lamellae and stacking faults defects generated from the growth interface. Atomic resolution scanning transmission electron microscopy reveals the formation of twin boundary defects in the films, resulting in the degradation of crystalline quality. Results from this work provide fundamental understanding of the MOCVD epitaxy of (100) beta-Ga2O3 on on-axis Ga2O3 substrates and the dependence of the material properties on growth conditions. The limitation of electron transport properties of the (100) beta-Ga2O3 thin films below 25 cm(2)/Vs is attributed to the formation of incoherent boundaries (twin lamellae) and stacking faults grown along the on-axis (100) crystal orientation.

Automated summary

In this study, the MOCVD growth of (100) beta-Ga2O3 on on-axis Ga2O3 substrates was comprehensively investigated. The dependence of growth conditions on surface morphology, growth rate, and electron transport properties of the thin films was studied. The results provide a fundamental understanding of MOCVD epitaxy and the limitations of electron transport properties in (100) beta-Ga2O3 thin films grown along the on-axis (100) crystal orientation.