Epitaxial growth of the first two members of the Ban+1InnO2.5n+1 Ruddlesden-Popper homologous series

We demonstrate the epitaxial growth of the first two members, and the n = infinity member of the homologous Ruddlesden-Popper series of Ban + 1Inn O-2.5 (n + 1) of which the n = 1 member was previously unknown. The films were grown by suboxide molecular-beam epitaxy where the indium is provided by a molecular beam of indium-suboxide [ In2O (g)]. To facilitate ex situ characterization of the highly hygroscopic barium indate films, a capping layer of amorphous SiO2 was deposited prior to air exposure. The structural quality of the films was assessed by x-ray diffraction, reflective high-energy electron diffraction, and scanning transmission electron microscopy. (C) 2022 Author(s).

Automated summary

Epitaxial growth of the first two members and the n = infinity member of the homologous Ruddlesden-Popper series of Ban + 1Inn O-2.5 (n + 1) has been demonstrated. The films were grown using suboxide molecular-beam epitaxy, and the structural quality was assessed using various techniques, such as X-ray diffraction and electron microscopy.