4.7 Article

Phase transitions and microwave dielectric behaviors of the (Bi1-xLi0.5xY0.5x)(V1-xMox)O4 ceramics

Journal

JOURNAL OF THE AMERICAN CERAMIC SOCIETY
Volume 106, Issue 6, Pages 3455-3461

Publisher

WILEY
DOI: 10.1111/jace.18998

Keywords

BiVO4; microwave dielectric ceramic; scheelite structure

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In this study, (Li0.5Y0.5)MoO4 ceramic with tetragonal scheelite structures was used to enhance the microwave dielectric properties of BiVO4 ceramics. XRD and in situ XRD analysis confirmed the formation of scheelite structured solid-solution ceramics in (Bi1-xLi0.5xY0.5x)(V1-xMox)O-4 system. The (Bi1-xLi0.5xY0.5x)(V1-xMox)O-4 solid-solution ceramics with x value <= 0.1 sintered below 800 degrees C exhibited good microwave dielectric properties.
Microwave dielectric ceramics with intrinsic low sintering temperatures are potential candidates for low temperature co-fired ceramics technology. In the present work, the (Li0.5Y0.5)MoO4 ceramic with tetragonal scheelite structures was selected to improve microwave dielectric properties of BiVO4 ceramics. As proved by X-ray diffraction (XRD) results, scheelite structured solid-solution ceramics were formed with x value <= 0.1 in the (Bi1-xLi0.5xY0.5x)(V1-xMox)O-4. In situ XRD results further confirmed that the addition of (Li0.5Y0.5)MoO4 also lowered transition temperature from distorted monoclinic to tetragonal scheelite structure. When x value increased further, zircon phase was detected by XRD. Room and high-temperature Raman spectra also supported the XRD results. Differences of thermal expansion coefficients of both monoclinic and tetragonal scheelite phases lead to an abnormality at phase transition temperature. Good microwave dielectric properties with permittivity above 70 and Qf (Q = quality factor = 1/dielectric loss and f = frequency) value above 8000 GHz were obtained in the (Bi1-xLi0.5xY0.5x)(V1-xMox)O-4 solid-solution ceramics with x value <= 0.1 sintered below 800 degrees C. However, permittivity peak values at phase transition temperatures lead to large positive or negative temperature coefficient of resonant frequency, and this needs to be modified via composite technologies in the future.

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