Investigation of MoS2 by k0 instrumental neutron activation analysis and electronic paramagnetic resonance

Hexagonal molybdenite (2H-MoS2) is one of the most promising 2D semiconductors with enormous potential applications in electronic, optoelectronic, and spintronic devices. Its electrical properties are strongly influenced by impurities such as Arsenic and Rhenium but the mechanisms involved remain unknown. In this work, geological and commercial samples of 2H-MoS2 were investigated by neutron activation analysis. Arsenic, Rhenium, and other elements, were found in the mg/kg concentration range. Their possible role in the physical properties was investigated by electron paramagnetic resonance and Hall Effect measurements. Preliminary results suggest the influence of Arsenic and Rhenium in the electrical proprieties of the MoS2.

Automated summary

Hexagonal molybdenite (2H-MoS2) is a highly promising 2D semiconductor with vast potential applications in electronic, optoelectronic, and spintronic devices. This study investigates the influence of impurities such as Arsenic and Rhenium on the electrical properties of 2H-MoS2 using neutron activation analysis. The presence of Arsenic, Rhenium, and other elements in the mg/kg concentration range is confirmed, with preliminary results suggesting their impact on the electrical properties of MoS2.