Journal
JOURNAL OF NON-CRYSTALLINE SOLIDS
Volume 599, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.jnoncrysol.2022.121949
Keywords
a-SiC thin film; Magnetron sputtering; Substrate negative bias voltage; Mechanical property; Tribological property
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The microstructure and properties of a-SiC thin films can be controlled by tuning the substrate bias voltage. The film deposited at -100V exhibits good tribological performance and maintains stability in the temperature range from 25°C to 600°C.
a-SiC thin films were deposited using pulsed magnetron sputtering by tuning substrate bias voltages. With the increase of bias voltages to-150 V, the microstructure transforms from columnar to featureless, and the surface changes from cauliflower-like to smooth and then to hole. The density of the Si-C bond and content of sp3 C-C first increase and then decrease and reach a maximum value at-100 V. The internal stress, adhesion strength, hardness (H) and elastic modulus (E) also increase and then decrease due to the changes in structures. The maximal internal stress, adhesion strength, H and E are 1.54 GPa, 6.68 N, 21 GPa, and 230 GPa, respectively. The film deposited at-100 V exhibits good tribological performance from 25 degrees degrees C to 600 degrees degrees C. The wear mechanism of the films at elevated temperatures was discussed in detail.
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