Journal
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume 33, Issue 36, Pages 27014-27021Publisher
SPRINGER
DOI: 10.1007/s10854-022-09365-5
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Funding
- National Natural Science Foundation of China [51767010]
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The effects of Ti2Nb10O29 incorporation on the microstructure and dielectric properties of MgNb2O6 microwave dielectric ceramics were investigated. It was found that an appropriate amount of Ti2Nb10O29 can promote the sintering of MgNb2O6 and improve the density of the ceramics, while also improving the dielectric constant and temperature coefficient of resonance frequency.
MgNb2O6- x wt% Ti2Nb10O29 (x = 0, 2, 4, 6, 8, 10) microwave dielectric ceramics with near zero temperature coefficient of resonance frequency tau(f) were prepared by the solid-state reaction technique. The effects of Ti2Nb10O29 incorporation on the microstructure and dielectric properties of MgNb2O6 were investigated to probe the formation and sintering behavior of each phase. The results show that the appropriate Ti2Nb10O29 addition can promote the sintering of MgNb2O6 and improve the density of the ceramics. The quality factor Q x f was decreased with the increasing of Ti2Nb10O29, but, at the same time, the dielectric constant epsilon(r) and the temperature coefficient of resonance frequency tau(f) were improved, which is consistent with the theoretical calculation. When the addition amount x is equal to 4, the ceramic sample has the best microwave dielectric properties after sintering at 1280 degrees C for 4 h: epsilon(r) = 21.72, Q x f = 76,850 GHz, tau(f) = -9.6 x 10(-6)/degrees C.
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