Structural and optical properties of sputtered Bi2Se3 thin films on sapphire (0001), quartz and GaN/sapphire (0001)

Thin films of Bi2Se3 were deposited on various substrates such as sapphire (0001), quartz, and GaN/sapphire (0001) using magnetron sputtering. The crystalline quality of deposited thin films was studied by high-resolution X-ray diffraction and {0003n} diffraction confirms that the films are oriented along the c-axis. Raman spectroscopy measurements revealed the pure rhombohedral phase of Bi2Se3 thin films. These films possess truncated hexagonal morphology, and elemental analysis showed stoichiometric Bi2Se3. The chemical and electronic states of the Bi(2)Se(3 )thin films were validated by X-ray photoelectron spectroscopy which revealed the formation of Bi2Se3 compound. The optical properties of the Bi(2)Se(3 )thin films were studied using broadband absorption spectroscopy and the optical bandgap of Bi2Se3 thin films (similar to 150 nm) was found in the range of 1.40-1.48 eV. The Bi(2)Se(3 )thin film deposited using magnetron sputtering with good structural and optical quality will pave the way for the development of futuristic devices.

Automated summary

Thin films of Bi2Se3 were deposited on various substrates using magnetron sputtering. The films were found to have good crystalline quality, pure rhombohedral phase, and truncated hexagonal morphology. The optical bandgap of the films was in the range of 1.40-1.48 eV, and they showed potential for the development of futuristic devices.