Journal
JOURNAL OF LIGHTWAVE TECHNOLOGY
Volume 41, Issue 1, Pages 240-248Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JLT.2022.3215622
Keywords
Microwave photonics; silicon photonics; high-power photodetectors; traveling-wave photodetectors
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In this experiment, a 4-stage and an 8-stage Ge/Si distributed traveling-wave photodetectors (TWPDs) with high RF output powers and large bandwidths were demonstrated. The genetic algorithm was used to optimize the design parameters, resulting in improved bandwidths for both TWPDs. The measured results showed good agreement with the calculated frequency responses.
We experimentally demonstrate a 4-stage and an 8-stage Ge/Si distributed traveling-wave photodetectors (TWPDs) with high RF output powers and large bandwidths. The genetic algorithm is utilized to synergistically optimize multiple relevant design parameters, including the dimension of the coplanar waveguide electrode and the aperiodic arrangement of the PD array. After the genetic algorithm optimization, the 3dB bandwidth of the 4-stage TWPD is improved from 46 GHz to 54 GHz under the constraint that the bandwidth of the unterminated single PD element is 50 GHz. Meanwhile, the 3dB bandwidth of the 8-stage TWPD is improved from 33 GHz to 40 GHz. A good agreement between measured and calculated frequency responses is obtained. The measured maximum RF output powers of the aperiodic 4-stage and 8-stage TWPDs at 30 GHz are 2.5 dBm and 6.3 dBm, respectively. Furthermore, the effectiveness of our design methodology is verified by measurement results of devices fabricated at different silicon photonics foundries.
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