Design and preliminary results of a shunt voltage regulator for a HV-CMOS sensor in a 150 nm process

This paper presents the design and preliminary results of a shunt voltage regulator and two different bandgap reference designs for use with a monolithic High Voltage CMOS (HV-CMOS) sensor in a 150 nm technology node. One bandgap reference design is based on Bipolar Junction Transistors (BJTs) as the reference element of the circuit - the rest of the circuit is entirely designed with Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). The second bandgap reference design makes use of MOSFETs exclusively.

Automated summary

This paper presents the design and preliminary results of shunt voltage regulator and two different bandgap reference designs for a monolithic High Voltage CMOS (HV-CMOS) sensor in a 150 nm technology node. One design utilizes Bipolar Junction Transistors (BJTs) as the reference element, while the other design exclusively uses MOSFETs.