In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device

ADVANCED MATERIALS

Volume 27, Issue 47, Pages 7767-7774

WILEY-V C H VERLAG GMBH

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Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter

1. National Natural Science Foundation of China [61434001, 61574083]
2. National Key Project of Science and Technology [2011ZX02403-002]
3. 973 Program [2015CB352100]
4. Ministry of Education Scholarship of China
5. postdoctoral fellowship (PDF) program of the Natural Sciences and Engineering Research Council of Canada (NSERC)
6. China Postdoctoral Science Foundation (CPSF)
7. Stanford School of Engineering China Research Exchange Program
8. Intel Ph.D. Fellowship
9. Stanford Non-Volatile Memory Technology Research Initiative (NMTRI) industrial affiliate program
10. Div Of Electrical, Commun & Cyber Sys
11. Directorate For Engineering [1542152] Funding Source: National Science Foundation