Related references
Note: Only part of the references are listed.β-Gallium oxide power electronics
Andrew J. Green et al.
APL MATERIALS (2022)
Simulation modelling of III-nitride/β-Ga2O3 HEMT for emerging high-power nanoelectronics applications
G. Purnachandra Rao et al.
JOURNAL OF THE KOREAN PHYSICAL SOCIETY (2022)
A High RF-Performance AlGaN/GaN HEMT With Ultrathin Barrier and Stressor In Situ SiN
Sheng Wu et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)
Interface characterization of Al2O3/m-plane GaN structure
Shota Kaneki et al.
AIP ADVANCES (2021)
First demonstration of X-band AlGaN/GaN high electron mobility transistors using free-standing AlN substrate over 15 W mm-1 output power density
Shiro Ozaki et al.
APPLIED PHYSICS EXPRESS (2021)
A Novel Step-Doped Channel AlGaN/GaN HEMTs with Improved Breakdown Performance
Jianhua Liu et al.
MICROMACHINES (2021)
Dynamic characteristics after bias stress of GaN HEMTs with field plate on free-standing GaN substrate
Qiang Ma et al.
ELECTRONICS LETTERS (2021)
Experimental Results for AlGaN/GaN HEMTs Improving Breakdown Voltage and Output Current by Electric Field Modulation
Baoxing Duan et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)
Breakdown Voltage Enhancement in ScAlN/GaN High-Electron-Mobility Transistors by High-k Bismuth Zinc Niobate Oxide
Junao Cheng et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)
β-Gallium Oxide Devices: Progress and Outlook
Masataka Higashiwaki
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2021)
Millimeter-Wave AlGaN/GaN HEMTs With 43.6% Power-Added-Efficiency at 40 GHz Fabricated by Atomic Layer Etching Gate Recess
Yichuan Zhang et al.
IEEE ELECTRON DEVICE LETTERS (2020)
The dawn of Ga2O3 HEMTs for high power electronics - A review
R. Singh et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2020)
Simulation of AlGaN/GaN HEMTs' Breakdown Voltage Enhancement Using Gate Field-Plate, Source Field-Plate and Drain Field Plate
Biyan Liao et al.
ELECTRONICS (2019)
Improved operation stability of Al2O3/AlGaN/GaN MOS high-electron-mobility transistors grown on GaN substrates
Yuji Ando et al.
APPLIED PHYSICS EXPRESS (2019)
Impact of Channel Thickness on the Large-Signal Performance in InAlGaN/AlN/GaN HEMTs With an AlGaN Back Barrier
Anna Malmros et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2019)
High Performance and Highly Robust AlN/GaN HEMTs for Millimeter-Wave Operation
Kathia Harrouche et al.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2019)
A review of the most recent progresses of state-of-art gallium oxide power devices
Hong Zhou et al.
JOURNAL OF SEMICONDUCTORS (2019)
Low-Dispersion, High-voltage, Low-Leakage GaN HEMTs on Native GaN Substrates
Muhammad Alshahed et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2018)
High-Performance Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Combined With TiN-Based Source Contact Ledge and Two-Step Fluorine Treatment
Ling Yang et al.
IEEE ELECTRON DEVICE LETTERS (2018)
Enhancement of Breakdown voltage i n AlGaN/GaN HEMTs: Field Plate Plus High-k Passivation Layer and High Acceptor Density in Buffer Layer
Toshiki Kabemura et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2018)
An analytical model of low field and high field electron mobility in wurtzite indium nitride
Shulong Wang et al.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS (2016)
Recent progress in Ga2O3 power devices
Masataka Higashiwaki et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2016)
Breakdown behaviour of high-voltage GaN-HEMTs
W. Saito et al.
MICROELECTRONICS RELIABILITY (2015)
SiNx/InAlN/AlN/GaN MIS-HEMTs With 10.8 THz . V Johnson Figure of Merit
Brian P. Downey et al.
IEEE ELECTRON DEVICE LETTERS (2014)
Breakdown mechanisms in AlGaN/GaN HEMTs: An overview
Gaudenzio Meneghesso et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2014)
Development of gallium oxide power devices
Masataka Higashiwaki et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2014)
High performance AlInN/AlN/GaN p-GaN back barrier Gate-Recessed Enhancement-Mode HEMT
Sarosij Adak et al.
SUPERLATTICES AND MICROSTRUCTURES (2014)
Record Combination of Power-Gain Cut-Off Frequency and Three-Terminal Breakdown Voltage for GaN-on-Silicon Devices
Farid Medjdoub et al.
APPLIED PHYSICS EXPRESS (2013)
Gate-Recessed Integrated E/D GaN HEMT Technology With fT/fmax >300 GHz
Michael L. Schuette et al.
IEEE ELECTRON DEVICE LETTERS (2013)
RF and microwave characteristics of a 10 nm thick InGaN-channel gate recessed HEMT
T. R. Lenka et al.
JOURNAL OF SEMICONDUCTORS (2013)
1.4-kV Breakdown Voltage for AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrate
Susai Lawrence Selvaraj et al.
IEEE ELECTRON DEVICE LETTERS (2012)
18-GHz 3.65-W/mm Enhancement-Mode AlGaN/GaN HFET Using Fluorine Plasma Ion Implantation
Z. H. Feng et al.
IEEE ELECTRON DEVICE LETTERS (2010)
High performance and high reliability AlGaN/GaN HEMTs
Toshihide Kikkawa et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2009)
Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors
Takuma Nanjo et al.
APPLIED PHYSICS LETTERS (2008)
Epitaxial relationship between wurtzite GaN and β-Ga2O3
Encarnacion G. Villora et al.
APPLIED PHYSICS LETTERS (2007)
30-W/mm GaNHEMTs by field plate optimization
YF Wu et al.
IEEE ELECTRON DEVICE LETTERS (2004)
AlGaN/GaN HEMTs - An overview of device operation and applications
UK Mishra et al.
PROCEEDINGS OF THE IEEE (2002)
Carrier-concentration-dependent low-filed-mobility model for InAlAs/InGaAs/InP lattice-matched HEMT for microwave application
J Jogi et al.
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS (2001)
Share Paper
