Microstructural analysis of GaN films grown on (100) MgF2 substrate by 4D nanobeam diffraction and energy-dispersive X-ray spectrometry

The use of highly efficient and solarblind GaN photocathodes as part of multichannel plate UV detectors for applications in astronomy would strongly benefit from the direct growth of GaN on typical window materials with high transmission down to the deep UV range. GaN growth on MgF2 substrates by plasma -assisted molecular beam epitaxy has recently been demonstrated. Here, we report an extensive scanning transmission electron microscopy study of the thin film microstructure for growth at 525 degrees C and 650 degrees C on (100) MgF2. These results are systematically supported by X-ray diffraction reciprocal space maps. For both growth temperatures predominant cubic (111), (115) and (110) GaN is found with no preferred nucleation on the substrate and typical grain sizes of 100-200 nm. All observed orientations can be understood as the result of first and second order twins on different {111} planes related to the underlying substrate. The higher growth temperature shows a strongly increased twin density along with a higher surface roughness. Furthermore, grains with cubic (110) GaN growth show a reduced density and a reduced size of about 20 nm. In addition, in-diffusion of Mg and F into the GaN is observed, which is accompanied by the formation of cavities in the MgF2 directly at the interface.

Automated summary

This study investigated the microstructure of GaN thin films grown on (100) MgF2 substrates at 525 and 650 degrees Celsius using plasma-assisted molecular beam epitaxy. The results showed that predominant cubic (111), (115), and (110) GaN orientations were observed at both growth temperatures, with no preferred nucleation on the substrate and typical grain sizes of 100-200 nm. The higher growth temperature resulted in a significantly higher twin density and surface roughness.