Growth of type I superlattice III-V heterostructure in horizontal nanowires enclosed in a silicon oxide template

Template assisted selective epitaxy (TASE) offers an attractive monolithic integration route for III-V semi-conductors on Si, benefitting from reduced defect density and versatility in its employment to create various electronic and photonic devices. This work achieves compositional and morphological control of lattice matched InGaAs quantum wells embedded in a horizontal InP nanowire grown directly from a Si seed and of the respective heterointerfaces. A series of growth experiments introducing variations of the precursor switching sequence in the growth recipe, and a subsequent scanning transmission electron microscopy and energy dispersive X-ray spectroscopy analysis, were employed to create and characterize a type I superlattice enclosed in a silicon oxide template.

Automated summary

Template assisted selective epitaxy (TASE) is a promising technique for integrating III-V semiconductors on Si, providing reduced defect density and versatility in fabricating electronic and photonic devices. This study demonstrates the control of composition and morphology of InGaAs quantum wells embedded in a horizontal InP nanowire grown directly on Si, as well as the characterization of heterointerfaces. By varying the precursor switching sequence and utilizing scanning transmission electron microscopy and energy dispersive X-ray spectroscopy, a type I superlattice enclosed in a silicon oxide template was successfully created and analyzed.