Sign reversal of the anomalous Hall effect in antiperovskite (110)-oriented Mn3.19Ga0.81N1-δ film

Antiperovskite compounds with abundant magnetic phase transitions provide an ideal platform for exploring nontrivial magnetotransport responses. In this study, the anomalous Hall effect (AHE) in an antiperovskite (110)-oriented Mn3.19Ga0.81N1-delta film up to room temperature was observed, and an unusual sign reversal was detected in the Hall measurements. The AHE reversal suggests that the carrier reversal corresponds to a magnetic transition from a ferrimagnetic order to noncollinear antiferromagnetic order at about 240 K. Analysis of the scaling relation of AHE indicates that the sign reversal originates from the transition from the skew scattering dominated AHE to the intrinsic mechanism dominated AHE. These findings will inspire effective control of the magnetic configuration and innovative applications for manipulating carrier transport in spintronic memory devices based on antiperovskite films. Published under an exclusive license by AIP Publishing.

Automated summary

This study observed the anomalous Hall effect in an antiperovskite film and discovered an unusual sign reversal in the Hall measurements. The reversal was found to be caused by a magnetic transition occurring at around 240K. These findings are significant for effectively controlling magnetic configuration and innovative applications in spintronic memory devices.