Journal
JOURNAL OF APPLIED PHYSICS
Volume 132, Issue 23, Pages -Publisher
AIP Publishing
DOI: 10.1063/5.0125684
Keywords
-
Categories
Funding
- U.S. Department of Energy's Office of Energy Efficiency and Renewable Energy (EERE) under the Building Technologies Office [DE-EE0009163]
Ask authors/readers for more resources
This study provides an accurate prediction of the characteristics of GaN/InGaN light emitting diodes by incorporating low and high indium compositions within quantum wells at the submicrometer scale. Previous explanations for the transport mechanisms across InGaN/GaN heterostructures in these devices have been lacking.
III-Nitride light emitting diodes (LEDs) are widely used in a range of high efficiency lighting and display applications, which has enabled significant energy savings in the last decade. Despite the wide application of GaN LEDs, transport mechanisms across InGaN/GaN heterostructures in these devices are not well explained. Fixed polarization sheet charges at InGaN/GaN interfaces lead to large interface dipole charges, which create large potential barriers to overcome. One-dimensional models for transport across such heterostructures predict turn-on voltages that are significantly higher than that found in real devices. As a result, conventional models for transport cannot predict the performance of new designs such as for longer wavelength LEDs or for multi-quantum well LEDs. In this work, we show that incorporating low and high indium compositions within quantum wells at the submicrometer scale can provide an accurate prediction of the characteristics of GaN/InGaN light emitting diodes.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available