Transition between positive and negative magnetoresistance of zirconium oxynitride films in the variable-range hopping regime

In this research, the electrical transport properties of zirconium oxynitride films are studied. The transition from positive to negative magnetoresistance in the variable-range hopping transport regime is observed with the decrease in the temperature. The positive magnetoresistance is caused by the shrinkage effect of electronic wavefunctions. While, the negative magnetoresistance, which is independent of the magnetic field orientations, can be ascribed to the Zeeman splitting and/or the spin-flip hopping effect of the loca-lized states. Further experimental studies are needed to reveal the exact transition mechanism. (c) 2022 Elsevier B.V. All rights reserved.

Automated summary

The electrical transport properties of zirconium oxynitride films are investigated, and a transition from positive to negative magnetoresistance is observed in the variable-range hopping transport regime with decreasing temperature. The positive magnetoresistance is caused by the shrinkage effect of electronic wavefunctions, while the negative magnetoresistance, independent of magnetic field orientations, can be attributed to Zeeman splitting and/or spin-flip hopping effect of localized states. Further experimental studies are required to elucidate the exact transition mechanism.