β-Ga2O3 bulk single crystals grown by a casting method

A novel casting method was developed to grow beta-Ga2O3 bulk single crystals without using a seed crystal. After separation from the crucible and processing, 2-inch diameter single crystal beta-Ga2O3 ingots with (100) plane could be obtained and no large imperfection were observed. The 10 x 10 mm(2) beta-Ga2O3 single crystals samples with different crystal orientation have good crystal quality with full width at half maximum less than 50 '', surface roughness less than 0.5 nm and defect density at the magnitude of 10(4) cm(-2). On the basis of the experimental phenomena, a numerical simulation model was proposed to explain the crystal growth process in the casting method. (c) 2022 Elsevier B.V. All rights reserved.

Automated summary

A novel casting method was developed to grow beta-Ga2O3 bulk single crystals without using a seed crystal. High-quality beta-Ga2O3 single crystal ingots with different orientations were obtained, exhibiting good crystal quality and low defect density. A numerical simulation model was proposed to explain the crystal growth process in the casting method.