4.7 Article

Temperature-dependent oxygen annealing effect on the properties of Ga2O3 thin film deposited by atomic layer deposition

Related references

Note: Only part of the references are listed.
Article Materials Science, Ceramics

Recrystallization behavior, oxygen vacancy and photoluminescence performance of sputter-deposited Ga2O3 films via high-vacuum in situ annealing

Haiyan Wang et al.

Summary: In this study, Ga2O3 films were deposited on Si substrates and annealed in situ in a high-vacuum environment. The in situ annealing enhanced surface mobility and crystallinity of the films, resulting in higher oxygen vacancy concentration and improved photoluminescence performance. The research findings provide significant insights for the further development of Ga2O3-based devices.

CERAMICS INTERNATIONAL (2022)

Article Chemistry, Physical

Optical and structural characterization of high crystalline β-Ga2O3 films prepared using an RF magnetron sputtering

Vijay Patil et al.

Summary: Beta-Ga2O3 films were prepared on sapphire substrates using RF magnetron sputtering, showing low optical band-gap and high absorption in UV and visible regions. Raman modes and photoluminescence spectra revealed the existence of high energy excitons and optical transitions at high temperatures, indicative of good crystallinity and unique optical properties of the films.

JOURNAL OF ALLOYS AND COMPOUNDS (2022)

Article Chemistry, Physical

Adsorption of H2S on AgO(001) surface: A density-functional theory investigation

Etienne Nzouana et al.

Summary: The adsorption of harmful H2S molecule on AgO(001) surface was investigated using GGA + PBE and GGA + U methods. The calculations showed that the favorable adsorption site of H2S on AgO(001) surface is dependent on the number of layers of AgO(001) slab, the exchange correlation functional, and the termination used.

SURFACE AND INTERFACE ANALYSIS (2022)

Article Engineering, Electrical & Electronic

First-Principles Simulation of Structural, Electronic and Optical Properties of Cerium Trisulfide (Ce2S3) Compound

R. M. Arif Khalil et al.

Summary: In this study, the structural, electronic and optical properties of Ce(2)S(3) compound were explored using first-principles simulation based on density functional theory (DFT) with CASTEP code. The obtained results show good agreement with experimental and previous theoretical values, indicating the stability of the orthorhombic crystal structure of Ce(2)S(3). The energy bandgap value suggests that Ce(2)S(3) belongs to the semiconductor category, with maximum optical reflectivity observed in the ultraviolet region.

JOURNAL OF ELECTRONIC MATERIALS (2021)

Article Physics, Applied

Oxygen annealing induced changes in defects within β-Ga2O3 epitaxial films measured using photoluminescence

Rujun Sun et al.

Summary: In this study, photoluminescence spectroscopy was used to monitor changes in emission bands of n-type Ga2O3 films under different annealing temperatures in an oxygen environment. The results show an increase in non-radiative defects with higher temperatures and a decrease in UV intensity. Different activation energies were observed for defect generation at different depths, indicating the importance of understanding the formation and propagation of defects in materials.

JOURNAL OF PHYSICS D-APPLIED PHYSICS (2021)

Article Chemistry, Physical

Novel SnO2-coated β-Ga2O3 nanostructures for room temperature hydrogen gas sensor

Q. N. Abdullah et al.

Summary: Nanostructured beta-Ga2O3 nanobelts were successfully fabricated using a thermal evaporation method, and a sol-gel processed SnO2 layer was deposited to modify the functionality of gallium oxide. The sensing characteristics of SnO2-functionalized beta-Ga2O3 nanobelts towards analyte gas H2 were found to be greatly improved within a certain concentration range.

INTERNATIONAL JOURNAL OF HYDROGEN ENERGY (2021)

Article Engineering, Electrical & Electronic

Effects of growth pressure on the characteristics of the β-Ga2O3 thin films deposited on (0001) sapphire substrates

Tao Zhang et al.

Summary: Beta-Ga2O3 films were grown on (0001) sapphire substrates by low-pressure MOCVD, and the effects of growth pressure on growth rate, surface morphology, and optical properties were investigated. Increasing growth pressure led to a decrease in growth rate, reduction in grain size, and smoother surface morphology, while maintaining high optical transmittance.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2021)

Article Materials Science, Multidisciplinary

Comparative Study of High-Temperature Annealed and RTA Process β-Ga2O3 Thin Film by Sol-Gel Process

Min-Sung Bae et al.

Summary: In this study, a Ga2O3 thin film was prepared using the sol-gel process and different annealing processes were compared for their effects on beta-Ga2O3 formation. Increasing the annealing temperature and time was necessary for the formation of beta-Ga2O3 thin film, requiring a minimum of 900 degrees Celsius. The Rapid Thermal Annealing (RTA) process showed similar structural and optical characteristics with a shorter processing time compared to the electric furnace process.

COATINGS (2021)

Article Materials Science, Coatings & Films

Atomic layer deposition and characterization of Zn-doped Ga2O3 films

Zsofia Baji et al.

Summary: This study focuses on the atomic layer deposition, annealing, and Zn doping of gallium oxide (Ga2O3) films using a new Ga precursor. It investigates the effects of deposition parameters and postdeposition annealing on the electrical properties, as well as the impact of Zn doping on these properties, addressing crucial issues for UV sensor applications.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2021)

Article Nanoscience & Nanotechnology

Electrical and chemical analysis of Ti/Au contacts to β-Ga2O3

Luke A. M. Lyle et al.

Summary: Chemical and electrical measurements of Ti/(010) beta-Ga2O3 and Ti/(001) beta-Ga2O3 interfaces were conducted with XPS, J-V, and C-V measurements as a function of annealing temperature. The results show that the reactivity of Ti on the beta-Ga2O3 surface strongly affects the electrical performance and stability of Ti/beta-Ga2O3 ohmic contacts at elevated temperatures. The oxidized Ti amount increased with annealing temperature, and the Schottky barrier height had variations with temperature changes.

APL MATERIALS (2021)

Article Chemistry, Physical

Impact of annealing temperature on band-alignment of PLD grown Ga2O3/Si (100) heterointerface

Manoj K. Yadav et al.

JOURNAL OF ALLOYS AND COMPOUNDS (2020)

Article Engineering, Electrical & Electronic

Influence of deposition temperature on amorphous Ga2O3 solar-blind ultraviolet photodetector

Wenhui Zhu et al.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2020)

Article Physics, Applied

Point defects in Ga2O3

Matthew D. McCluskey

JOURNAL OF APPLIED PHYSICS (2020)

Article Chemistry, Physical

The effect of oxygen partial pressure on band gap modulation of Ga2O3 grown by pulsed laser deposition

Thi Kim Oanh Vu et al.

JOURNAL OF ALLOYS AND COMPOUNDS (2019)

Article Materials Science, Multidisciplinary

Electronic Structure of Tungsten-Doped β-Ga2O3 Compounds

Vishal Zade et al.

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2019)

Article Materials Science, Ceramics

Effect of annealing atmosphere on leakage and dielectric characteristics of multiferroic gallium ferrite

Vijay Singh et al.

JOURNAL OF THE AMERICAN CERAMIC SOCIETY (2017)

Article Chemistry, Multidisciplinary

Physico-chemical properties of unusual Ga2O3 polymorphs

Simon Penner et al.

MONATSHEFTE FUR CHEMIE (2016)

Article Physics, Applied

Oxygen deficiency and Sn doping of amorphous Ga2O3

M. D. Heinemann et al.

APPLIED PHYSICS LETTERS (2016)

Article Chemistry, Multidisciplinary

Water-Induced Scandium Oxide Dielectric for Low-Operating Voltage n- and p-Type Metal-Oxide Thin-Film Transistors

Ao Liu et al.

ADVANCED FUNCTIONAL MATERIALS (2015)

Article Crystallography

Conducting Si-doped γ-Ga2O3 epitaxial films grown by pulsed-laser deposition

Takayoshi Oshima et al.

JOURNAL OF CRYSTAL GROWTH (2015)

Article Physics, Applied

Epitaxial stabilization of pseudomorphic alpha-Ga2O3 on sapphire (0001)

Robert Schewski et al.

APPLIED PHYSICS EXPRESS (2015)

Article Physics, Applied

Epitaxial growth of phase-pure ε-Ga2O3 by halide vapor phase epitaxy

Yuichi Oshima et al.

JOURNAL OF APPLIED PHYSICS (2015)

Article Chemistry, Physical

Plasma enhanced atomic layer deposition of Ga2O3 thin films

Ranjith K. Ramachandran et al.

JOURNAL OF MATERIALS CHEMISTRY A (2014)

Article Chemistry, Physical

Characterization of oxygen deficient gallium oxide films grown by PLD

A. Petitmangin et al.

APPLIED SURFACE SCIENCE (2013)

Review Materials Science, Multidisciplinary

Nanofunctional gallium oxide (Ga2O3) nanowires/nanostructures and their applications in nanodevices

Sudheer Kumar et al.

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2013)

Article Materials Science, Multidisciplinary

Solution-deposited Zr-doped AlOx gate dielectrics enabling high-performance flexible transparent thin film transistors

Wooseok Yang et al.

JOURNAL OF MATERIALS CHEMISTRY C (2013)

Article Chemistry, Physical

Optical properties of LFZ grown β-Ga2O3:Eu3+ fibres

N. F. Santos et al.

APPLIED SURFACE SCIENCE (2012)

Article Materials Science, Multidisciplinary

Growth and etching characteristics of gallium oxide thin films by pulsed laser deposition

Sin-Liang Ou et al.

MATERIALS CHEMISTRY AND PHYSICS (2012)

Review Chemistry, Multidisciplinary

Atomic Layer Deposition: An Overview

Steven M. George

CHEMICAL REVIEWS (2010)

Review Physics, Applied

Defects in ZnO

M. D. McCluskey et al.

JOURNAL OF APPLIED PHYSICS (2009)

Article Materials Science, Multidisciplinary

Growth and stability of Ga2O3 nanospheres

Simon Penner et al.

THIN SOLID FILMS (2008)

Article Materials Science, Multidisciplinary

Gallium oxide films for filter and solar-blind UV detector

ZG Ji et al.

OPTICAL MATERIALS (2006)

Article Physics, Applied

Rf-plasma-assisted molecular-beam epitaxy of β-Ga2O3 -: art. no. 031105

EG Víllora et al.

APPLIED PHYSICS LETTERS (2006)

Article Crystallography

First principles methods using CASTEP

SJ Clark et al.

ZEITSCHRIFT FUR KRISTALLOGRAPHIE (2005)

Article Physics, Applied

Optical spectroscopy study on β-Ga2O3

EG Víllora et al.

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS (2002)

Article Materials Science, Multidisciplinary

Atomic layer deposition (ALD):: from precursors to thin film structures

M Leskelä et al.

THIN SOLID FILMS (2002)