Growth and characterization of GePb/Ge multiple quantum wells

GePb/Ge multiple quantum well (MQW) structures with a Pb content of up to 7.2% were successfully grown on Ge(100) substrates via sputtering epitaxy. Scanning electron microscopy revealed that both the Pb content in the GePb layer and Ge layer thickness affect the Pb surface segregation. High-resolution X-ray diffraction and cross-sectional transmission electron microscopy indicated that the GePb/Ge MQW struc-tures had a high crystal quality. Moreover, the thermal stability of the GePb/Ge MQW structures was in-vestigated, and the MQW structures were found to be stable at an annealing temperature of 500 degrees C. The band gaps of the GePb/Ge MQWs were measured, and the band gap regulation caused by the quantum confinement effect was verified. These results indicate that the MQW structure is a promising approach for realizing efficient GePb light sources.(c) 2022 Elsevier B.V. All rights reserved.

Automated summary

The GePb/Ge multiple quantum well (MQW) structures were successfully grown on Ge(100) substrates, and the band gap regulation caused by the quantum confinement effect was verified. The MQW structures exhibited high crystal quality and thermal stability, making them a promising approach for efficient GePb light sources.