4.3 Article

Statistical modeling of V th distribution in ovonic threshold switches based on physical switching models

Journal

JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 62, Issue SH, Pages -

Publisher

IOP Publishing Ltd
DOI: 10.35848/1347-4065/acb35e

Keywords

ovonic threshold switch; threshold voltage; distribution; thermal runaway model; physically based electrical model; two-state defect model

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This paper discusses the statistical modeling of the V (th) distribution of an ovonic threshold switch, and proposes a distribution function that explains the V (th) variation and a method for estimating and judging it, based on three representative switching mechanisms. The relationship between the segment V (th) distribution and V (th) minimum distribution is examined through Monte Carlo simulations and analytical analysis, showing that the latter approaches the Weibull distribution with different convergence speed.
This paper discusses the statistical modeling of the V (th) distribution of an ovonic threshold switch, an integral component of high-speed, high-capacity storage-class memory. A distribution function that explains the V (th) variation and a method for estimating and judging it is proposed based on three representative switching mechanisms-thermal runaway model, physically based electrical model, and two-state defect model. We examined the relationship between the segment V (th) distribution and V (th) minimum distribution is examined by considering chip-level scaling in Monte Carlo simulations and analytical analysis of the distribution function. The latter distribution approaches the Weibull distribution; however, its convergence speed differs.

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