Enhanced contact properties of MoTe2-FET via laser-induced heavy doping

The doping technique is vital for applying two-dimensional (2D) materials such as transition metal dichalcogenide (TMDC)-based field effect transistors (FETs), which can control the channel polarity and improve the performance. However, as conventional doping techniques for silicon-based FET are not suitable for 2D materials, the realization of heavy doping of TMDC materials is challenging, especially for n-type heavy doping. This study reports a simple, regioselective, controllable, and chemically stable heavy doping method for 2H-MoTe2 crystal via high-density laser irradiation. The polarity of the doping can be controlled by changing the irradiation environment. For the MoTe2-nFET, good performance with enhanced contact properties was obtained using the contact doping method via laser irradiation in a vacuum environment.

Automated summary

This study presents a simple and controllable heavy doping method for 2H-MoTe2 crystal via high-density laser irradiation. The polarity of the doping can be controlled by changing the irradiation environment. Good performance with enhanced contact properties was achieved for MoTe2-nFET using the contact doping method via laser irradiation in a vacuum environment.