High-mobility 4 μm MOVPE-grown (100) β-Ga2O3 film by parasitic particles suppression

AbsrtractIn this work, we comprehensively investigate the development of unwanted parasitic particles in the MOVPE chamber while growing mu m level films. The density of the parasitic particles is found to be pronounced at film thicknesses starting from >1.5 to 2 mu m. These particles seem to induce structural defects such as twin lamellae, thereby harming the electrical properties of the grown film. The origin of the parasitic particle is attributed to the parasitic reactions within the chamber triggered by the promoted gas-phase reactions during the growth process, which can be largely reduced by increasing the total gas flow and decreasing the showerhead distance to the susceptor. A film thickness of up to 4 mu m has been achieved after minimizing the density of parasitic particles. Thereby, RT Hall measurements reveal carrier mobilities of 160 cm(2)V(-1)s(-1) at carrier concentrations of 5.7 x 10(16 )cm(-3).

Automated summary

In this study, the development of unwanted parasitic particles in the MOVPE chamber during the growth of mu m level films is comprehensively investigated. The density of parasitic particles is observed to be significant at film thicknesses starting from >1.5 to 2 mu m. These particles induce structural defects, such as twin lamellae, which adversely affect the electrical properties of the grown film. The parasitic particles originate from parasitic reactions within the chamber triggered by the promoted gas-phase reactions during the growth process, and their density can be reduced by increasing total gas flow and reducing the showerhead distance to the susceptor. After minimizing the density of parasitic particles, film thicknesses up to 4 mu m have been achieved. RT Hall measurements reveal carrier mobilities of 160 cm(2)V(-1)s(-1) at carrier concentrations of 5.7 x 10(16) cm(-3).