4.3 Article

Electrical and optical properties of highly crystalline W-VO2 nano-films prepared by thermal oxidation of V-WO3 precursors

Journal

JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 62, Issue 1, Pages -

Publisher

IOP Publishing Ltd
DOI: 10.35848/1347-4065/acae68

Keywords

W doped VO2 films; thermal oxidation; high crystallization; metal-insulator transition; electric properties; optical properties

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Highly-crystalline W doped VO2 nanofilms were obtained through thermal oxidation of V-WO3 precursors, and their electric and optical properties were studied. The W-VO2 films are composed of rutile and monoclinic phases due to the decrease of the phase transition temperature. The results show that the W dopants lead to a great decrease in the cool-state resistances and their apparent activation energy.
Highly-crystalline W doped VO2 (W-VO2) nanofilms were obtained through thermal oxidation of V-WO3 precursors, with the electric and optical properties being studied. The W-VO2 films are composed of rutile and monoclinic phases due to the decrease of the phase transition temperature. The results show that the W dopants lead to a great decrease in the cool-state resistances and their apparent activation energy as they form donor levels. The electric analysis also shows that the W-VO2 films have a smooth metal-insulator transitions across wide temperature range due to the W ununiform distribution, and the transition temperature, temperature coefficient of resistances, and hysteresis width are greatly reduced. The metallic phase contents are estimated based on the temperature dependent transmittances, which increases with the W contents at ambient temperatures. Because of the rutile phase and the conductance increase, the IR transmittances of the cool-state W-VO2 films and their solar modulation becomes lower. It is also seen that the optical bandgap is unchanged when W dopant level is low, but can be decreased when the W content increases.

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