Journal
INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS
Volume 36, Issue 4, Pages -Publisher
WILEY
DOI: 10.1002/jnm.3081
Keywords
analytical model; GaAs pHEMT; intermodulation distortion; nonlinearity; two-tone measurements
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Intermodulation distortion tests were performed using the two-tone technique to investigate the frequency nonlinearity of active devices like nano pHEMT based on gallium arsenide semiconductor material. The results demonstrated a direct connection between intermodulation distortion components and RF transconductance derivatives. It was also found that the third-order intermodulation distortion power is minimized when the second derivative of the transconductance is zero.
Intermodulation distortion tests using the two-tone technique with an extensive bias range were used to demonstrate the nonlinearity in terms of frequency for active devices like nano pHEMT based on gallium arsenide semiconductor material. It is demonstrated that the intermodulation distortion components are directly connected to the RF transconductance derivatives calculated using the two-tone test. Furthermore, it was discovered that the third-order intermodulation distortion power is lowest when the second derivative of the transconductance G(m3) is zero. To emphasize the influence of RF transconductance, a two-tone approach has been presented as an empirical, analytical explanation for this device's nonlinearity. The modeled data is demonstrated to agree with the results of the measurements, making it a helpful tool for analyzing these devices.
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