Journal
INORGANICA CHIMICA ACTA
Volume 544, Issue -, Pages -Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.ica.2022.121168
Keywords
Spin crossover; Molecular junctions; Molecular electronics; Electrical switching; Spintronics; Switching devices
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This paper reviews the spin-crossover (SCO) behavior of metal complexes involving d4-d7 first-row transition metals and their applications in functional devices. It particularly focuses on the performance of Fe-based SCO materials in electronic devices. This review provides an understanding that can guide the further optimization of Fe-based SCO technologies in a wide range of electronic applications.
Metal complexes involving d4-d7 first-row transition metals exhibit spin-crossover (SCO) behaviour between low -spin and high-spin states in response to external stimuli such as temperature, pressure, voltage control and light irradiation. They are of interest in functional devices such as sensors, molecular electronics, spintronic devices, and well as memory and information processing applications. In particular, many electronic devices exploiting the SCO phenomena contain Fe-based SCO materials, which have shown significant performance. This paper reviews the state of the art and configurations of such functional devices on a range of scales. Utilisation of SCO functionality ranging from single molecule junctions to nanoparticles and thin films incorporated into horizontal and vertical junction device architectures, will be elaborated. This review provides a systematic overview in the characteristics of Fe-based SCO functional device and their corresponding performance. This understanding provides a pathway for further optimization of Fe-based SCO technologies in a wide range of electronic applications.
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