The performance of the ICIP Ga-free superlattice longwave infrared photodetector for high operating temperature

This paper presents the performance of an interband cascade long wavelength infrared detector designed for high operating temperature (>= 196 K). The device was based on the Ga-free InAs/InAsSb superlattice with highly doped p+/n+ tunneling junctions connecting adjacent stages. The 3 -stage device reached detectivity-3 x 107 cm Hz1/2/W at 300 K and 10 % cut-off wavelength of-10.5 mu m. The device exhibits higher performance than multi-junction PVM HgCdTe detector optimized for 10.6 mu m reaching-1.3 x 107 cm Hz1/2/W, for 9.8 mu m and 300 K.

Automated summary

This paper presents the performance of an interband cascade long wavelength infrared detector designed for high operating temperature (>= 196 K). The device was based on the Ga-free InAs/InAsSb superlattice with highly doped p+/n+ tunneling junctions connecting adjacent stages. The 3-stage device reached detectivity-3 x 107 cm Hz1/2/W at 300 K and 10 % cut-off wavelength of-10.5 mu m. The device exhibits higher performance than multi-junction PVM HgCdTe detector optimized for 10.6 mu m reaching-1.3 x 107 cm Hz1/2/W, for 9.8 mu m and 300 K.